50N65S1 / 50N65 600V 50A N-Channel IGBT - High Speed Switching Transistor

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৳270.00

Repair and build industrial-grade power electronics with the 50N65S1 / 50N65 50A IGBT, available now at the best price in Bangladesh from Electrapac. This Insulated Gate Bipolar Transistor (IGBT) combines the high-speed switching of a MOSFET with the high-current handling of a bipolar transistor. It is the gold standard in BD for high-stress applications like Inverter Welding Machines and Industrial UPS systems. Read more

SKU: #EP50N65S1

The 50N65S1 (50N65) N-Channel IGBT is a high-performance power transistor engineered for heavy-duty switching applications. At Electrapac, we recommend this Insulated Gate Bipolar Transistor (IGBT) for technicians and engineers working on high-voltage power electronics, as it combines the simple gate drive of a MOSFET with the high-current, low-saturation voltage capability of a bipolar transistor.

Product Overview

The 50N65 is designed for high-speed switching and exceptional thermal durability. Rated at 600V and 50A, this Trenchstop™ technology-based IGBT is built to minimize switching losses, making it the perfect choice for high-frequency inverters and power converters. Whether you are repairing an industrial welding machine or building a custom motor controller, this component provides the ruggedness required for demanding environments.

Key Features for Electrapac Customers

  • Low Saturation Voltage: Features a low V_CE(sat), which significantly reduces conduction loss and heat generation during high-current operation.

  • Trenchstop™ Technology: Provides a very tight parameter distribution and high robustness, ensuring stable performance even under heavy loads.

  • Integrated Fast Recovery Diode: Many variants include a built-in anti-parallel diode to protect the transistor from inductive "kickback" during switching.

  • Standard TO-247 Package: The large metal-backed tab ensures maximum heat transfer to your cooling system, essential for high-power builds.

  • High Input Impedance: Can be driven by standard gate driver ICs, simplifying your Electrapac circuit designs.

Technical Implementation Guide

To ensure the longevity of your 50N65 in high-power circuits, follow these professional tips:

  1. Thermal Management: At 50A, heat is your biggest enemy. You must mount this to a large aluminum heatsink with high-quality thermal grease or a sil-pad.

  2. Gate Protection: Always use a gate resistor (typically 5Ω to 20) to prevent oscillations and a 10k pull-down resistor to ensure the IGBT stays OFF when not triggered.

  3. Snubber Circuits: For inductive loads like motors or transformers, we recommend adding a snubber (RC circuit) across the Collector and Emitter to absorb high-voltage spikes.

  4. Driver Voltage: Ensure your gate driver provides a clean +15V for fully turning the device ON; lower voltages can cause the IGBT to operate in the linear region, leading to rapid overheating.

Primary Applications

  • Inverter Welders: The primary switching element for high-current DC welding machines.

  • Solar Inverters: Converting DC power from solar arrays into AC power with high efficiency.

  • Uninterruptible Power Supplies (UPS): High-speed switching for battery-to-AC conversion.

  • Induction Heating: Used in industrial induction furnaces and high-end induction cooktops.

  • Motor Drives: Controlling variable speed AC and DC motors in industrial automation.

Why Shop at Electrapac?

We understand that in power electronics, authenticity is everything. We source our 50N65S1 IGBTs from reputable manufacturers to ensure they handle the full 600V/50A load without catastrophic failure. Visit us at for the heavy-duty semiconductors that power your world.

Specifications Descriptions
Model Number 50N65S1 / FGA50N65S1
Transistor Type N-Channel IGBT (Field Stop Technology)
Collector-Emitter Voltage (Vces})600V
Collector Current (Ic) 100°C50A
Pulsed Collector Current (Icm)150A
Gate-Emitter Voltage (Vges)±20V
Collector-Emitter Saturation Voltage ($V_{ce(sat)}$) 1.8V (Typical)
Maximum Power Dissipation ($P_d$) 312W (at 25°C)
Operating Junction Temperature -55°C to +150°C
Switching Speed High Speed (Low switching loss)
Package 1 x 1

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